SILICON TIMELINEBY VLSI KOREA

MEMORY / BANDWIDTH

Memory technology timeline

Track DRAM, HBM and 3D NAND generation changes across development, sampling, production and shipment.

“Which signal behind a generation name is closest to real customer adoption?”

5companies
40verified milestones
1987–2026coverage
STATUS SHAPE

Shape, line style and text encode event status.

AnnouncedDevelopedSamplingRisk prod.Mass prod.ShippedTarget
FAMILY COLOR

The same color marks a curated comparison cohort across companies—not physical equivalence.

Early NAND / ≤96-layer 3DHBM generation 1HBM2DRAM 1x–1z classHBM2E3D NAND 100–199 layersDRAM 1α / 1a / 14nm classHBM33D NAND 200–299 layersDRAM 1β–1γ classHBM3ELatest 3D NAND cohortHBM4

COMPARE DESK

Overlay company timelines.

MY TIMELINE / LOCAL WORKSPACE

Keep a comparison worth returning to.

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Company
40 milestones5 companies selected
YEAR
1987198819901992199419961998200020022004200620082010201220142016201820202022202420262027
Kioxia7
Samsung9
SK hynix9
YMTC5
Micron10

DATA NOTEOpen an event for its source and date precision. Month, period and year records are plotted as uncertainty bands; future targets use dashed styling.

Data as of 2026.07.15

READ 01

Read status and evidence before names.

DRAM process generations and NAND layer counts are different axes and are not directly comparable. The timeline preserves each company’s names while normalizing announcement, development, sampling, risk production, mass production and shipment.

Read classification rules